Abstract
Metal-semiconductor-metal devices were fabricated by utilizing MgZnO thin films to demonstrate random lasing in the deep ultraviolet wavelength range tuned by Mg content in the film. Room temperature lasing is realized in the wavelength range down to 284 nm.
© 2017 Optical Society of America
PDF ArticleMore Like This
Z. Z. Zhang, L.K. Wang, S. Han, J. Zheng, X.H. Xie, and D. Z. Shen
ASa3A.23 Advanced Optoelectronics for Energy and Environment (AOEE) 2013
Deng Xie, Chong Chen, Zhi Ren Qiu, Hao Jiang, Dong Sing Wuu, and Zhe Chuan Feng
Su2A.117 Asia Communications and Photonics Conference (ACP) 2017
Mohammad Suja, Sunayna Binte Bashar, and Jianlin Liu
SW1M.5 CLEO: Science and Innovations (CLEO:S&I) 2016