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GaN Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics

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Abstract

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a semi-polar GaN substrate, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption.

© 2017 Optical Society of America

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