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Ultrafast Phonon Dynamics in Graphene-hBN Structures

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Abstract

We present ultrafast pump-probe measurements that show fast relaxation of carriers in graphene-hexagonal Boron Nitride (hBN) heterostructures due to the high interfacial thermal conductance of the graphene-hBN interface. This warrants the use of hBN as a substrate for high powered graphene devices.

© 2017 Optical Society of America

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