Systematic study of Si-based Ge/Ge0.9Sn0.1/Ge photodiodes with 2.6 μm detector cutoff

Thach Pham; Wei Du; Huong Tran; Joe Margetis; John Tolle; Greg Sun; Richard A. Soref; Hameed A. Naseem; Baohua Li; Mansour Mortazavi; Shui-Qing Yu

doi:10.1364/CLEO_SI.2016.STh1G.7

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper STh1G.7
•https://doi.org/10.1364/CLEO_SI.2016.STh1G.7

Systematic study of Si-based Ge/Ge_0.9Sn_0.1/Ge photodiodes with 2.6 μm detector cutoff

Thach Pham, Wei Du, Huong Tran, Joe Margetis, John Tolle, Greg Sun, Richard A. Soref, Hameed A. Naseem, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

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Photodetectors (STh1G)

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T. Pham, W. Du, H. Tran, J. Margetis, J. Tolle, G. Sun, R. A. Soref, H. A. Naseem, B. Li, M. Mortazavi, and S. Yu, "Systematic study of Si-based Ge/Ge0.9Sn0.1/Ge photodiodes with 2.6 μm detector cutoff," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper STh1G.7.

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Abstract

A double heterostructure Ge/Ge_0.9Sn_0.1/Ge photodiode detector grown on Si was systematically characterized. Temperature-dependent device performance has been investigated. A cutoff wavelength of 2.6 μm and the peak responsivity of 0.19 A/W at 300 K were achieved.

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