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Semiconductor optical amplifiers at 2.0-µm wavelength heterogeneously integrated on silicon

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Abstract

We report the first semiconductor optical amplifiers at 2.0-µm wavelength, heterogeneously integrated by bonding an InP-based active region to silicon. On-chip gain larger than 10 dB is observed at 20°C over a 40-nm bandwidth.

© 2016 Optical Society of America

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