Current-Injection Terahertz Lasing in Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

Gen Tamamushi; Takayuki Watanabe; Alexander A. Dubinov; Hiroyuki Wako; Akira Satou; Tetsuya Suemitsu; Maxim Ryzhii; Victor Ryzhii; Victor Ryzhii; Taiichi Otsuji

doi:10.1364/CLEO_SI.2016.SM3L.7

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper SM3L.7
•https://doi.org/10.1364/CLEO_SI.2016.SM3L.7

Current-Injection Terahertz Lasing in Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, and Taiichi Otsuji

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

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Terahertz Dynamics in Materials I (SM3L)

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G. Tamamushi, T. Watanabe, A. A. Dubinov, H. Wako, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji, "Current-Injection Terahertz Lasing in Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper SM3L.7.

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Abstract

A distributed-feedback (DFB) dual-gate graphene-channel transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with calculation based on DFB-Fabry-Perrot hybrid-mode modeling.

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