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Gate-tunable, high-responsivity, and room-temperature infrared photodetectors based on a graphene-Bi2Se3 heterostructure

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Abstract

We demonstrate infrared photodetectors based on graphene-Bi2Se3 heterostructures with high responsivity (≥1.9 A/W) at room temperature. Strong photogating effect across the tunneling barrier and built-in potential enables the internal quantum efficiency larger than 100 %.

© 2016 Optical Society of America

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