Abstract
A Ge0.95Sn0.05/Ge0.9Sn0.1/Ge0.95Sn0.05 single quantum well was grown on Si via chemical vapor deposition. Temperature-dependent Photoluminescence shows the emission peak from the GeSn well. The studied structure aims for group-IV based efficient light source on Si.
© 2016 Optical Society of America
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