Enhancement of THz emission from GaN surface by Ga vacancy-related defects

Yuji Sakai; Iwao Kawayama; Hidetoshi Nakanishi; Masayoshi Tonouchi

doi:10.1364/CLEO_SI.2015.SM3H.4

CLEO: 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper SM3H.4
•https://doi.org/10.1364/CLEO_SI.2015.SM3H.4

Enhancement of THz emission from GaN surface by Ga vacancy-related defects

Yuji Sakai, Iwao Kawayama, Hidetoshi Nakanishi, and Masayoshi Tonouchi

CLEO: Science and Innovations 2015

San Jose, California United States
10–15 May 2015
ISBN: 978-1-55752-968-8

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THz Materials Science (SM3H)

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Y. Sakai, I. Kawayama, H. Nakanishi, and M. Tonouchi, "Enhancement of THz emission from GaN surface by Ga vacancy-related defects," in CLEO: 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper SM3H.4.

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Abstract

The enhancement of terahertz emission from a GaN wafer induced by Ga vacancy-related defects was observed. This phenomena can be explained by the change of the band bending at these defects.

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