Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Not Accessible

Your library or personal account may give you access

Abstract

We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μJ/cm2.

© 2015 Optical Society of America

PDF Article
More Like This
Room temperature lasing action in an InGaN quantum dot laser under optical excitation

Koichi Tachibana, Takao Someya, Yasuhiko Arakawa, Ralph Werner, and Alfred Forchel
QPD7 Quantum Electronics and Laser Science Conference (CLEO:FS) 1999

Lasing from As Grown GaAs-AlGaAs Core-Shell Nanowires up to Room Temperature

Zhihuan Wang, Marc Currie, Paola Prete, Nico Lovergine, and Bahram Nabet
LTh2I.4 Laser Science (LS) 2015

Room temperature lasing in 6μm-diameter quantum dot microring laser on GaAs substrate

N.V. Kryzhanovskaya, A.E. Zhukov, M.V. Maximov, A.M. Nadtochy, I.A. Slovinsky, A.V. Savelev, M.M. Kulagina, Yu.M. Zadiranov, S.I. Troshkov, D. Livshits, and S. Mikhrin
CTu1N.4 CLEO: Science and Innovations (CLEO:S&I) 2012

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved