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GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate

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Abstract

GaInAs/InP multi quantum wells light-emitting diode, emitting at 1.3-μm, was fabricated by metal organic vapor phase epitaxi on wafer bonded InP/Quartz substrate. The device has been operated under continuous wave operation at room temperature.

© 2015 Optical Society of America

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