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Conferences > CLEO_SI > 2014 > STu3G > STu3G.3

The Monolithic Heterogeneous Integration of GaAs PIN Photodiode and Si CMOS-based Transimpedance Amplifier

E. Kume, H. Ishii, T. Itatani, S. Yamanaka, T. Takada, M. Hata, T. Osada, T. Inoue, and Y. Matsumoto

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Abstract

This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.

© 2014 Optical Society of America

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