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Conferences > CLEO_SI > 2014 > STh4M > STh4M.3

High speed Si modulators with high modulation efficiency and low free carrier absorption by depleting carriers through fringe field junctions

Kai-Ning Ku and Ming-Chang M. Lee

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Abstract

A high speed Si modulator with fringe field junctions is presented. Low carrier absorption (1.3 dB/mm) and Vπ L (1.8 V-cm) are demonstrated. The measured modulation speed and depth are 11.8-GHz and 8-dB.

© 2014 Optical Society of America

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