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Conferences > CLEO_SI > 2014 > STh1G > STh1G.6

1.3 μm InAs/GaAs Quantum Dot Lasers on SOI Waveguide Structures

Katsuaki Tanabe and Yasuhiko Arakawa

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Abstract

A 1.3-μm InAs/GaAs quantum dot laser on a silicon-on-insulator waveguide structure with a threshold current density of 300 A/cm2 and lasing temperatures greater than 100°C is fabricated by direct wafer bonding and layer transfer.

© 2014 Optical Society of America

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