Investigation of Photoluminescence from Ge1-xSnx: A CMOS-Compatible Material Grown on Si via CVD

Wei Du; Seyed Amir Ghetmiri; Aboozar Mosleh; Benjamin R. Conley; Liang Huang; Amjad Nazzal; Richard A Soref; Greg Sun; John Tolle; Hameed A. Naseem; Shuiqing Yu

doi:10.1364/CLEO_AT.2014.JW2A.57

CLEO: 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper JW2A.57
•https://doi.org/10.1364/CLEO_AT.2014.JW2A.57

Investigation of Photoluminescence from Ge_1-xSn_x: A CMOS-Compatible Material Grown on Si via CVD

Wei Du, Seyed Amir Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Liang Huang, Amjad Nazzal, Richard A Soref, Greg Sun, John Tolle, Hameed A. Naseem, and Shuiqing Yu

CLEO: Science and Innovations 2014

San Jose, California United States
8–13 June 2014
ISBN: 978-1-55752-999-2

From the session
Poster Session 2 (JW2A)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
W. Du, S. A. Ghetmiri, A. Mosleh, B. R. Conley, L. Huang, A. Nazzal, R. A. Soref, G. Sun, J. Tolle, H. A. Naseem, and S. Yu, "Investigation of Photoluminescence from Ge1-xSnx: A CMOS-Compatible Material Grown on Si via CVD," in CLEO: 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper JW2A.57.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Photoluminescence (PL) from Ge_1-xSn_x grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures.

PDF Article

More Like This

Photoluminescence from GeSn/Ge Heterostructure Microdisks with 6% Sn Grown on Si via CVD

Seyed Amir Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Liang Huang, Wei Du, Amjad Nazzal, Greg Sun, Richard Soref, John Tolle, Hameed A. Naseem, and Shui-Qing Yu
AW1H.2 CLEO: Applications and Technology (CLEO:A&T) 2014

Enhanced infrared photoluminescence from Ge1-xSnx alloys

Wen-Yao Hsieh, Yu-Hao You, Kun-Mao He, Yu-Hsiang Peng, Guo-En Chang, and Henry H. Cheng
16a_D4_5 JSAP-OSA Joint Symposia (JSAP) 2013

Photoluminescence Characteristics Of Ge1-xSnx Nanostructures Grown On Si Substrates Using Molecular Beam Epitaxy

R. Aluguri, A. K. Katiyar, R. Bar, and S. K. Ray
M4A.78 International Conference on Fibre Optics and Photonics (Photonics) 2014

Previous Article Next Article

Poster Presentation

Media 1: PDF (1319 KB)