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Conferences > CLEO_SI > 2013 > CTh3F > CTh3F.1

Ultralow-threshold Continuous-wave Raman Silicon Laser Using a Photonic Crystal High-Q Nanocavity

Yasushi Takahashi, Yoshitaka Inui, Takashi Asano, and Susumu Noda

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Abstract

We report a unique design of a Raman silicon laser using a photonic crystal high-Q nanocavity without the reverse-biased p-i-n diode, which leads to the continuous-wave lasing operation with ultralow threshold power of ~1 μW.

© 2013 Optical Society of America

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