Abstract
We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.
© 2013 Optical Society of America
PDF ArticleMore Like This
Christopher Roberts, Stephanie Law, Torin Kilpatrick, Lan Yu, Troy Ribaudo, Eric Shaner, Daniel Wasserman, and Viktor Podolskiy
FM1C.3 CLEO: QELS_Fundamental Science (CLEO:FS) 2014
Urcan Guler, Wei Li, Nathaniel Kinsey, Gururaj V. Naik, Alexandra Boltasseva, Jianguo Guan, Alexander V. Kildishev, and Vladimir M. Shalaev
PW3B.8 Optical Nanostructures and Advanced Materials for Photovoltaics (SOLED) 2013
Joshua Hendrickson, Boyang Zhang, Nima Nader, Walter Buchwald, Richard Soref, and Junpeng Guo
IM1B.5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2013