1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

M. Müller; C. Grasse; K. Saller; T. Gründl; G. Böhm; M. Ortsiefer; M. C. Amann

doi:10.1364/CLEO_SI.2012.CW3N.2

Conference on Lasers and Electro-Optics 2012
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper CW3N.2
•https://doi.org/10.1364/CLEO_SI.2012.CW3N.2

1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

M. Müller, C. Grasse, K. Saller, T. Gründl, G. Böhm, M. Ortsiefer, and M. C. Amann

CLEO: Science and Innovations 2012

San Jose, California United States
6–11 May 2012
ISBN: 978-1-55752-943-5

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VCSEL/N-Cavity Lasers (CW3N)

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M. Müller, C. Grasse, K. Saller, T. Gründl, G. Böhm, M. Ortsiefer, and M. C. Amann, "1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper CW3N.2.

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Abstract

InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.

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