Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

© 2012 Optical Society of America

PDF Article
More Like This
Complementing Trends of Photoluminescence and Terahertz Intensities in Staggered InGaN Quantum Wells

Guan Sun, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, and Nelson Tansu
JW2A.50 CLEO: Applications and Technology (CLEO:A&T) 2013

High-Power Terahertz Generation due to Dipole Radiation within InGaN/GaN Multiple Quantum Wells

Guan Sun, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, and Nelson Tansu
CMM4 CLEO: Science and Innovations (CLEO:S&I) 2011

Observation of Enhanced THz Emission from InGaN/GaN Multiple Quantum Wells

Xiaodong Mu, Yujie J. Ding, Ronald A. Arif, Muhammad Jamil, and Nelson Tansu
CTuX4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved