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Reduction of Efficiency Droop in Semipolar (1 1 ¯01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

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Abstract

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

© 2011 Optical Society of America

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