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Differential Carrier Lifetimes and Efficiency of InGaN/ GaN Quantum Well and Quantum Dot Light Emitting Diodes

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Abstract

Temperature-dependent efficiency and differential carrier lifetimes have been measured on InGaN/GaN quantum well and quantum dot LEDs. The roles of Auger recombination and carrier leakage in LED efficiency roll-off are elucidated.

© 2011 Optical Society of America

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