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Blue Femtosecond Laser-Induced Crystallization of Amorphous Silicon

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Abstract

Amorphous silicon was crystallized using a blue ultrafast Ti:Sapphire laser system. Polysilicon with average grain size of 280 nm was achieved with fluence 30 of mJ/cm2 and overlapping of 93.75% at room temperature.

© 2020 The Author(s)

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