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Unidirectional Luminescence from InGaN/GaN Quantum-Well Metasurfaces

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Abstract

We demonstrate metasurface-based designs of InGaN/GaN quantum-well structures that generate narrow, unidirectional emission lobes at arbitrary engineered angles. The metasurface structuring also leads to ~100-fold enhancements in photoluminescence efficiencies for emission into air.

© 2020 The Author(s)

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