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Site-controlled generation of tin-vacancy centers in diamond via shallow ion implantation and diamond overgrowth

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Abstract

We generate tin-vacancy (SnV-) centers in patterned arrays by shallowly implanting Sn ions into diamond through an implantation mask and subsequently growing diamond. This method eliminates extraneous emission lines present in vacuum-annealed SnV- samples.

© 2020 The Author(s)

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