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Engineering Atomic Defects in Hexagonal Boron Nitride via Resonant Optical Excitation of Phonons

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Abstract

We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 pm. Such defects are highly subwavelength (< 30 nm) with an alignment sensitive to the polarization.

© 2020 The Author(s)

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