Random Perfect Absorption in 2D Atomic Layers on All-Dielectric Substrates Mediated by Anderson Localization

Judson D. Ryckman

doi:10.1364/CLEO_QELS.2017.FTu4H.4

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper FTu4H.4
•https://doi.org/10.1364/CLEO_QELS.2017.FTu4H.4

Random Perfect Absorption in 2D Atomic Layers on All-Dielectric Substrates Mediated by Anderson Localization

Judson D. Ryckman

CLEO: QELS_Fundamental Science 2017

San Jose, California United States
14–19 May 2017
ISBN: 978-1-943580-27-9

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Functional Plasmonics with 2D and Novel Materials (FTu4H)

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J. D. Ryckman, "Random Perfect Absorption in 2D Atomic Layers on All-Dielectric Substrates Mediated by Anderson Localization," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper FTu4H.4.

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Abstract

I present an approach for achieving perfect absorption in 2D atomic layers utilizing randomized dielectric layers. The emergence of high Q optical modes featuring >99.9% absorption in single layer graphene is shown.

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