Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High performance 2150nm InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy

Not Accessible

Your library or personal account may give you access

Abstract

We report high performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers grown by metalorganic vapor phase epitaxy. The laser structure consists of two InAs/InGaAs QWs, with a 30 μm-wide ridge waveguide and two cleaved cavity facets. The continuous wave operation at room temperature is achieved, with an output power of larger than 215 mW per facet and with a low threshold current density of 90.4 A/cm2 per QW derived for the infinite cavity length. Under pulse injection mode, the maximal peak power per facet is as high as 1.35 W.

© 2015 Optical Society of America

PDF Article
This paper was not presented at the conference

More Like This
Strained multiple quantum well lasers emitting at 1.3 μm grown by low pressure metalorganic vapor phase epitaxy (LP-MOVFE)

D. Coblentz, T. Tanbun-Ek, K. A. Logan, and A. M. Sergent
CFD7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Low threshold current strained InAlGaAs/AlGaAs quantum well lasers grown by metalorganic vapour phase epitaxy

G. Vermeire, F. Vermaerke, P. Van Daele, and P. Demeester
CFE3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994

InGaAs/GaAs strained layer quantum well heterostructure lasers and laser arrays by metalorganic chemical vapor deposition

P. K. YORK, K. J. BEERNINK, G. E. FERNANDEZ, and J. J. COLEMAN
THM3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved