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Strain Relaxation in InGaN/GaN Multiple-Quantum Wells by Nano-Patterned Sapphire Substrates with Smaller Period

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Abstract

The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.

© 2015 Optical Society of America

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