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Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes

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Abstract

We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.

© 2015 Optical Society of America

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