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Implantation of proximal NV clusters in diamond by lithographically defined silicon masks with 5 nm resolution

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Abstract

We present the fabrication of nitrogen-vacancy (NV) spin chains by implantation through a silicon mask on diamond. A minimum implantation aperture width of 5 nm is produced. Super-resolution measurements reveal NV lines 26 nm wide and minimal NV-pitch of 8 nm.

© 2014 Optical Society of America

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