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Electroluminescence from a GaAs/AlGaAs Heterostructure at High Electric Fields: Evidence for Real- & k-Space Transfer

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Abstract

We study impact-ionization-induced electroluminescence (EL) from a GaAs/AlGaAs heterostructure under high bias. In addition to k-space transfer (the Gunn effect), EL spectra indicate real-space (GaAs-to-AlGaAs) transfer. Microscopy shows strong EL near the anode.

© 2014 Optical Society of America

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