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Investigation of Hot Photons in GaN/AlN High Electron Mobility Transistor Based on Stokes Raman Scattering

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Abstract

We investigated hot phonons based on Stokes Raman scattering from a GaN/AlN high electron mobility transistor. Such a simple method is advantageous compared with the method based on Stokes and anti-Stokes Raman scattering.

© 2014 Optical Society of America

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