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Auger-type Hole Trapping Process at Green Emission Centers of ZnO Nanowires

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Abstract

The origins of the green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies. Herein, transient absorption spectroscopy (TAS) revealed a small Stokes shift of ~180 meV between the GE-centers (located at ~0.7 eV above the valence band) and the GE peak – yielding the first experimental evidence of the GE originating from charge transitions of the ZnO di-vacancies proposed recently in density functional calculations. TAS also uncovered an ultrafast Auger-type hole-trapping process to VZnO that occurs in a sub-ps timescale

© 2013 Optical Society of America

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