Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Properties of InAs Quantum Dots in Nanoimprint Lithography Patterned GaAs Pits

Not Accessible

Your library or personal account may give you access

Abstract

We report on the structural and optical properties of InAs quantum dots fabricated into nanoimprint lithography patterned GaAs pits. The size-dependent properties of single site-controlled quantum dots and their integration into optical microcavities are presented.

© 2013 Optical Society of America

PDF Article
More Like This
Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer

Zhiqiang Bian, Qi Wang, Zhigang Jia, Zhihong Pan, Xiaomin Ren, Shiwei Cai, Jun Wang, and Yongqing Huang
AF1B.5 Asia Communications and Photonics Conference (ACP) 2013

Optical properties of InAs/GaAs quantum dots

J.-Y. Marzin, J.-M. Gérard, A. Izraël, and G. Bastard
QTuM1 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995

Site-controlled InAs Quantum Dots for Plasmonics

T.V. Hakkarainen, J. Tommila, A. Schramm, J. Simonen, T. Niemi, J. Kontio, M. Guina, C. Strelow, and T. Kipp
FM1B.3 CLEO: QELS_Fundamental Science (CLEO:FS) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved