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Conferences > CLEO_QELS > 2013 > JTh2A > JTh2A.109

Toward an Efficient Germanium-on-Silicon Laser: Ultimate Limits of Tensile Strain and n-Type Doping

David S. Sukhdeo, Donguk Nam, Ze Yuan, Birendra (Raj) Dutt, and Krishna C. Saraswat

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Abstract

We investigate the ultimate limits of tensile strain and n-type doping for improving germanium lasers. These ultimate limits occur around 2.3–3.7% biaxial strain and 1018–1019 cm−3 electrically-active doping. >100× threshold reductions are possible.

© 2013 Optical Society of America

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