Experimental Observation of Electron-Hole Recollisions in Semiconductors

Mark S. Sherwin

doi:10.1364/CLEO_QELS.2013.JF1K.1

CLEO: 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper JF1K.1
•https://doi.org/10.1364/CLEO_QELS.2013.JF1K.1

Experimental Observation of Electron-Hole Recollisions in Semiconductors

Mark S. Sherwin

CLEO: QELS_Fundamental Science 2013

San Jose, California United States
9–14 June 2013
ISBN: 978-1-55752-972-5

From the session
Nonlinear THz Science and Technology I (JF1K)

Open Access

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M. S. Sherwin, "Experimental Observation of Electron-Hole Recollisions in Semiconductors," in CLEO: 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper JF1K.1.

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Abstract

A strong quasi-cw terahertz electric field repeatedly collides electrons with holes, modulating a NIR laser to create a frequency comb with teeth separated by twice the terahertz frequency in this excitonic analog of high-order harmonic generation.

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