Abstract

Molybdenum disulphide (MoS2) has layered structure and is classed as a transition metal-disulphide (TMD) material. Recently it has drawn significant attention for exploring optoelectronic and photonic properties on sub-nanometre scale, with a potential for accessing quantum interactions [1]. The electronic structure and stoichiometry of TMDs make them distinguishable from the metallic graphene, as the TMDs depict a clear bandgap, as in compound semiconductors [2], which is quite attractive for device engineering and applications in photovoltaic, energy storage, and bandgap engineered light-sources [3]. In this research, the fabrication of undoped and Yb³⁺-ion doped MoS₂ nanometre (nm)-scale thin films are discussed using femto-second pulsed laser deposition (fs-PLD) and the structural and spectroscopic properties of fs-PLD are compared with liquid-phase epitaxy grown undoped MoS₂ films. Such a comparative analysis may offer materials fabrication platform in future for engineering optoelectronic and photonic devices on silica glass and silicon platforms.

© 2019 IEEE