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  • 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper ce_p_3

Improvement in Radiative Recombination Efficiency and Emission Power Density of Surface-Passivated InGaN Nano-disk in a Wire Heterostructure Array

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Abstract

GaN based materials are widely used for making light sources over a broad emission wavelength. The emission energy can also be tuned by choosing the degree of quantum confinement. With reduction in physical dimension, the exciton binding energy and the quantum confined Stark effect (QCSE) in a nanostructure also change significantly. In the present study, the impact of these changes has been discussed on emission intensity and internal quantum efficiency for top-down fabricated InGaN nano-disk in a wire heterostucture.

© 2019 IEEE

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