Abstract

Sapphire is a transparent crystalline dielectric of high hardness with many important applications, specifically to the next-generation touchscreens and to the LED growth, as substrates. However, sapphire cutting by ablative techniques is rather slow therefore fast material separation techniques are needed. Material separation by “stealth dicing” has been recently developed, it is based on material cleaving along a plane weakened by multiple ultrafast laser illuminations. This allows usually generating taper-free cutting and avoids material loss. However, the illuminated plane needs small spacing between the shot to shot (typically a few µm) and long damages inside the bulk. This requires lasers with both high repetition rate and high energy to allow high speed cutting and high aspect ratio damages.

© 2017 IEEE