Abstract

Considerable efforts have been made in the search for new photovoltaic (PV) materials that satisfy requirements such as low toxicity, optimum energy gap, high stability as well as the ability to synthesize by a wide range of methods. Tin (II) monosulfide (SnS), a binary metal (IV-VI) compound semiconductor offers many attributes. SnS is a p-type with high optical absorption coefficient >10⁴ cm⁻¹ and a band gap of E_g =1.1–1.32 eV making it a favourable material for PV applications and optical devices.

© 2017 IEEE