Abstract
For silicon photonics, specifically chip-level optical interconnects, an ultrahigh-speed low-energy-consuming laser that can be integrated onto a silicon (Si) wafer is an ideal element. Here, we report on a hybrid Si-on-chip micro-cavity laser structure with a potential of providing such characteristics. As shown in Fig. 1a, the laser structure is a vertical cavity, consisting of a high contrast grating (HCG) mirror formed in the Si layer of a Si-on-insulator wafer, an InP-based active material, and a dielectric distributed Bragg reflector [1–3]. ‘Hybrid’ reflects the heterogeneous integration of III-V material onto Si. In HCGs, the two propagating Bloch mode interplay with each other, providing a rich control over optical properties for vertical cavities as photonic crystals do for in-plane cavities. These include a small mode volume, control of in-plane group velocity, engineering dispersion, photonic hetero-structure [4], etc. These properties will be discussed in the talk.
© 2017 IEEE
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