Abstract
Photonic integrated circuits (PICs) based on InP have provided an effective solution to realize advanced functions at a system level with compact size. Such PICs have been demonstrated using various techniques such as epitaxial regrowth, hybrid/heterogeneous integration of InP and Silicon, and band gap engineering methods such as quantum well intermixing and selective area regrowth. However, a disadvantage of these methods when compared with regrowth free monolithic integration is their fabrication complexity and duration.
© 2017 IEEE
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