Abstract
Integration of active III/V semiconductor devices on Silicon substrates would tremendously increase the functionality of this semiconductor material. In order to realize true monolithic integration, a defect-free nucleation layer is of outmost importance. As CMOS industry nowadays focuses on exactly oriented (001) Si substrates, the integration of a III/V semiconductor based device structure, employing either lattice relaxed III/V layers for high electron mobility devices or the pseudomorphically strained, active direct-band gap material Ga(NAsP) for optic devices, also has to be pursued on this substrate type. High-efficiency, Si-based solar cells can however also be deposited on off-cut substrates.
© 2015 IEEE
PDF ArticleMore Like This
G.-H. Duan, G. Levaufre, A. Shen, N. Girard, S. Olivier, S. Malhouitre, A. Accard, C. Jany, A. Le Liepvre, D. Make, F. Lelarge, J. Decobert, G. de Valicourt, K. Ribaud, and C. Kopp
IT1A.1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2015
V. Dolores-Calzadilla, D. Heiss, B. Romeira, F. Pagliano, P. J. van Veldhoven, A. Fiore, and M. Smit
27J2_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015
Rajat Sharma, Hung-Hsi Lin, Matthew W. Puckett, and Yeshaiahu Fainman
SF2G.1 CLEO: Science and Innovations (CLEO:S&I) 2015