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  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CE_5b_1

Integration of cubic III/V semiconductors on silicon (001)

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Abstract

Integration of active III/V semiconductor devices on Silicon substrates would tremendously increase the functionality of this semiconductor material. In order to realize true monolithic integration, a defect-free nucleation layer is of outmost importance. As CMOS industry nowadays focuses on exactly oriented (001) Si substrates, the integration of a III/V semiconductor based device structure, employing either lattice relaxed III/V layers for high electron mobility devices or the pseudomorphically strained, active direct-band gap material Ga(NAsP) for optic devices, also has to be pursued on this substrate type. High-efficiency, Si-based solar cells can however also be deposited on off-cut substrates.

© 2015 IEEE

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