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  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CB_P_5

Increased slow-axis beam quality in 9xx nm high power broad area diode lasers by modifying the lateral current profile at the device edges

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Abstract

High-power GaAs-based broad-area (BA) diode lasers deliver output powers Popt > 10 W at conversion efficiencies ηE > 60%. However, they exhibit poor lateral beam quality, parameterized by the beam parameter product BPP95% = w95%Θ95% / 4, with beam waist w95% and far field angle Θ95% at 95% power content. The high values of BPP95% in BA lasers is one of the biggest challenges in their development [1] and the limiting physics remains unclear [2]. Although experimental data is available on the role of lateral wave-guiding due to self-heating and process-induced effects, the relative contribution of lateral gain guiding in BA lasers is less studied.

© 2015 IEEE

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