Abstract

Tunable single mode laser has been widely used in applications such as communication systems and gas sensing. Grating-based distributed feedback (DFB) lasers and distributed Brag reflector (DBR) lasers have been extensively developed in the past decades and are now used in many fields due to their robust single mode behaviour and outstanding wavelength tunability[1, 2]. However such devices are based on submicron gratings which require time-consuming and costly holographic lithography or electron beam lithography, followed by complicated and expensive epitaxial regrowth. Alternative options for simple tunable single mode lasers have continued to be an active area of research and many different designs have ever been reported [3]. Here we present a new design of an active 1x2 multimode-interference-Fabry-Perot (MMI-FP) composite cavity semiconductor laser diode on InP which demonstrates single longitudinal mode operation with a side mode suppression ratio (SMSR) of around 29dBm and a wavelength tuning range of 14nm in the L band.

© 2015 IEEE