Abstract

As a one of future industry driving force, Si photonic has the potential to achieve the high speed, low cost inter-chip transaction by using photon to transmit signal. Although the optical circuit integration on Si platform is keen to be demonstrated, the light emitting device still missing. Using quantum dots (QDs) as active region in laser structure is a promising solution, which has been proved on GaAs substrate.[1] To optimise the crystal quality, molecular beam epitaxy (MBE) system was used in the material growth. The advantage of MBE system is the high purity material and precisely control of growth rate. The MBE growth of GaAs on Si substrate has been studied and examined previously by T. Wang [2], which means the InAs/GaAs QD lasers on GaAs could able to immigrate to Si platform successfully. However, the difficulty of InAs/GaAs QD laser device on Si platform is the lattice difference between GaAs and Si platform (4%), which will introduce huge amount of threading dislocations (10¹⁰ cm⁻²) into the active region without any barriers. We introducing InAlAs/GaAs superlattice to successful eliminate most of threading dislocation and reduce the density down to 10⁶ cm⁻². [3] In this work, a InAs/GaAs QD laser with high power (>100 mW) and high operation temperature (110 °C) has been demonstrated.

© 2015 IEEE