Abstract
High-power vertical-external-cavity surface-emitting lasers (VECSELs) operating in the 1160-1200 nm range offer a unique opportunity to develop practical lasers emitting yellow-orange radiation via second harmonic generation [1]. VECSELs based on GaInAs/GaAs/GaAsP have proven to be suitable for producing high power at the short infrared wavelengths (1000-1120 nm range). However, for longer wavelengths the high lattice strain related to the high indium composition of the quantum wells has limited the output power to much lower levels. The highest output power reported for a VECSEL gain chip, grown by metal-organic vapour-phase epitaxy (MOVPE), and emitting at 1028 nm is >100 W [2]. Whereas, for longer wavelengths of ~1180 nm the highest reported output power for MOVPE-grown gain chip is ~8 W [3].
© 2015 IEEE
PDF ArticleMore Like This
Jussi-Pekka Penttinen, Tomi Leinonen, Ville-Markus Korpijärvi, Emmi Kantola, and Mircea Guina
CB_P_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015
Jussi-Pekka Penttinen, Tomi Leinonen, Antti Rantamäki, Ville-Markus Korpijärvi, Emmi Kantola, and Mircea Guina
ATu1A.8 Advanced Solid State Lasers (ASSL) 2017
T. Leinonen, E. Kantola, S. Ranta, M. Tavast, V.-M. Korpijärvi, and M. Guina
ThA2_1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013