Abstract

Silicon Photonics more and more is considered as a competitive platform for building complex photonic ICs, applicable in various fields, but the lack of a practical on-chip integrated compact, high-yield and electrically-driven laser source remains a major bottleneck. Due to its indirect bandgap, silicon itself is a poor light emitter. Therefore, new materials such as Germanium, III–V compounds and rare earth doped nanocrystals are being investigated and laser operation from hybrid III–V lasers [1], monolithic Germanium lasers [2] and monolithic III–V nanowire lasers [3] has been demonstrated. While III–V provides generally better performance, realizing monolithically integrated in-plane lasers that can be integrated with other waveguide circuits remains extremely challenging. In this paper, using a selective area growth technique originally developed for realizing next-generation ultrafast electronic transistors, we demonstrate a room temperature operating monolithic integrated in-plain InP DBR laser grown on a standard 300mm (001)-silicon substrate.

© 2015 IEEE