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  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CA_P_5

Efficient Q-Switched Ho: GdVO4 Laser At Room Temperature

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Abstract

Direct resonant pumping of singly Ho-doped lasers obtain 2μm laser radiation allows for the advantages of high conversion efficiency, minimal thermal loading and so on. Due to a large emission cross-section and a good energy storage capability, the Ho system is suited for generation of ns-class pulses with high peak power by Q-switching technique. At present, one of the new host materials for efficient Ho3+ laser operation is the uniaxial crystal gadolinium vanadate (GdVO4).

© 2015 IEEE

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