Abstract
Direct resonant pumping of singly Ho-doped lasers obtain 2μm laser radiation allows for the advantages of high conversion efficiency, minimal thermal loading and so on. Due to a large emission cross-section and a good energy storage capability, the Ho system is suited for generation of ns-class pulses with high peak power by Q-switching technique. At present, one of the new host materials for efficient Ho3+ laser operation is the uniaxial crystal gadolinium vanadate (GdVO4).
© 2015 IEEE
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