Abstract
Short pulse lasers operating at 1 µm based on YAG host crystals are of high impact in industry as demonstrated with Nd and Yb-doping. Compactness and simplicity are desirable parameters to design such reliable laser products. The use of a passive saturable absorber (SA) for Q-switching (PQS) simplifies the laser cavity compared to set-ups including an active modulator. Among such SAs, bulk crystals, semiconductors and carbon-nanostructures (nanotubes and graphene) have proved to be very efficient for PQS. Graphene was used as SA at 1 µm in Yb-fiber [1], Yb-doped waveguide [2] and Nd-doped bulk lasers [3]. However, we are not aware of any PQS demonstration of a graphene-SA Yb:YAG laser.
© 2015 IEEE
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